PhD Candidate
geofn@materials.uoc.gr
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KIOSEOGLOU GEORGIOS, Associate Professor, Materials Science & Technology Dept. - UOC
PELEKANOS NIKOLAOS, Professor, Materials Science & Technology Dept. - UOC
Abstract
Two-dimensional materials have inherent characteristics that make them good candidates for field effect transistors with reduced size. At the same time,however, our knowledge of the laws of scaling when it comes to two-dimensional material is incomplete due to the immature technology. The fabrication and characterisation of transistors based on two-dimensional semiconductors will be studied in this dissertation as well as how the transistor behaviour changes with the dimensions of the transistor. The ultimate goal is to have a better understanding of how two-dimensional materials behave in transistors and to develop a model based on the dimension of the transistors and the electrical behaviour.