Thermal neutron detection is crucial in several disciplines ranging from nuclear non-proliferation to sophisticated neutron science techniques. Historically, thermal neutron detection was reliably achieved through 3He proportional counters though dwindling stockpiles have caused demand for other neutron detection technologies. Semiconductor neutron detectors based on the direct conversion paradigm promise several benefits including compact size, high efficiency, fast response time, and great spatial resolution among others. However, current semiconducting materials have had limited success. In this talk, I will introduce the 2D semiconductor LiInP2Se6 as a promising material for thermal neutron detection. This compound melts congruently at 717 °C and has an optical band gap of 2.06 eV thus enabling easier crystal growth and suppression of thermally activated dark current, respectively. I will discuss the chemical vapor transport method that was developed which has enabled high quality single crystals to be synthesized in an ideal planar morphology for detectors. The planar detectors with evaporated gold contacts were able to resolve the energy of alpha particles (241Am) and the 6Li neutron capture reaction with great energy resolution. Future prospects for the optimization and utilization of this material will be discussed.
For forthcoming colloquia, please see: http://www.materials.uoc.gr/en/colloquia